Baliga joined the faculty of the Department of Electrical and Computer Engineering at North Carolina State University, Raleigh, North Carolina, as a Full Professor. Baliga is also the originator of the concept of merging Schottky and p-n junction physics to create a new family of JBS power rectifiers that are commercially available from various companies. For his work, Scientific American Magazine named him one of the ‘Eight heroes of the semiconductor revolution’ in their 1997 special issue commemorating the Solid-State Century.
He is the inventor of the IGBT which is now in production by many International Semiconductor companies. During this time, he pioneered the concept of combining MOS and Bipolar physics to create a new family of discrete devices. Baliga performed research and directed a group of 40 scientists at the General Electric Research and Development Center in Schenectady, NY, in the area of Power Semiconductor Devices and High Voltage Integrated Circuits. At R.P.I., he was the recipient of the IBM Fellowship in 1972 and the Allen B. His thesis work involved Gallium Arsenide diffusion mechanisms and pioneering work on the growth of InAs and GaInAs layers using Organometallic CVD techniques. degrees from Rensselaer Polytechnic Institute, Troy, NY, in 19, respectively. He was the recipient of the Philips India Medal and the Special Merit Medal (as Valedictorian) at I.I.T, Madras. Professor Baliga obtained his Bachelor of Technology degree in 1969 from the Indian Institute of Technology, Madras, India. It will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical and design engineers, as well as an important publication for semiconductor specialists. This book is the first available on the applications of the IGBT. The book presents recent applications in plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage, but it is also used in all renewable energy generation systems, including solar and wind power.
The IGBT device has proven to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasoline powered motor vehicles and energy-saving compact fluorescent light bulbs. The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor, Second Edition provides the essential information needed by applications engineers to design new products using the device in sectors including consumer, industrial, lighting, transportation, medical and renewable energy.
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